Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation  

作　　者：Xiu Yan Wei-Li Zhen Shi-Rui Weng Ran-Ran Zhang Wen-Ka Zhu Li Pi Chang-Jin Zhang 严秀;甄伟立;翁士瑞;张冉冉;朱文卡;皮雳;张昌锦(High Magnetic Field Laboratory,Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China;University of Science and Technology of China,Hefei 230026,China;Institutes of Physical Science and Information Technology,Anhui University,Hefei 230601,China)

机构地区：[1]High Magnetic Field Laboratory,Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China [2]University of Science and Technology of China,Hefei 230026,China [3]Institutes of Physical Science and Information Technology,Anhui University,Hefei 230601,China

出　　处：《Chinese Physics Letters》2021年第5期89-93,共5页中国物理快报（英文版）

基　　金：Supported by the National Key Research and Development Program of China (Grant Nos.2017YFA0403600 and 2016YFA0300404);the National Natural Science Foundation of China (Grant Nos.11874363,11974356 and U1932216);the Collaborative Innovation Program of Hefei Science Center,CAS (Grant No.2019HSC-CIP002)。

摘　　要：Atomically thin two-dimensional(2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photoresponse.For electronic devices, not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable. Layered structures composed of 2D materials of different properties can be delicately designed as various useful heterojunction or homojunction devices, in which the designs on the same material(namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved. We demonstrate that the insulating pristine ZnPS_3, a ternary transition-metal phosphorus trichalcogenide, can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms, respectively. The field-effect-transistor(FET) devices are prepared via an ultraviolet exposure lithography technique. The Co-ZnPS_3 device exhibits an electrical conductivity of 8 × 10^(4) S/m, which is comparable to the conductivity of graphene. The Cu-ZnPS_3 FET reveals a current ON/OFF ratio of 1-05 and a mobility of 3 × 10^(-2 )cm^(2)·V^(-1)·s^(-1). The realization of an insulator, a typical semiconductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices.

关 键 词：Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation 

分 类 号：TB34[一般工业技术—材料科学与工程]