Sb_(2)Te_(3)基热电薄膜的研究进展  

Research Progress on Antimony Telluride Based Thermoelectric Thin Films

作　　者：易文 赵永杰[1] 王伯宇 周志方 李亮亮[2] 李静波[1] YI Wen;ZHAO Yongjie;WANG Boyu;ZHOU Zhifang;Li Liangliang;Li Jingbo(School of Materials Science and Engineering,Beijing Institute of Technology,Beijing 100081,China;School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China)

机构地区：[1]北京理工大学材料学院,北京100081 [2]清华大学材料学院,北京100084

出　　处：《硅酸盐学报》2021年第6期1111-1124,共14页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(51972029);国家重点研发计划。

摘　　要：基于热电薄膜的微型热电器件在微区制冷、温差发电等领域具有广阔应用前景。具有高功率因子、ZT值的热电薄膜对微型热电器件的性能至关重要。Sb_(2)Te_(3)基材料是室温下性能优异的p型热电材料。然而,目前Sb_(2)Te_(3)基薄膜的热电性能仍然不能满足实际应用的需求。简述了热电材料研究的相关背景,介绍了Sb_(2)Te_(3)的晶体结构,概述了Sb_(2)Te_(3)基薄膜的常用制备技术,从提高功率因子和降低热导率2方面综述了提高Sb_(2)Te_(3)基薄膜热电性能的方法。重点介绍了材料组织、微观结构与热电性能的关系,即缺陷、择优取向、纳米颗粒、超晶格、有机无机杂化等对Sb_(2)Te_(3)基薄膜热电性能的影响。此外,对Sb_(2)Te_(3)基热电薄膜的发展方向予以展望。Micro thermoelectric devices based on thermoelectric films have promising applications in various fields such as micro-zone refrigeration and power generation.Thermoelectric films with high power factor and large ZT values are critical materials in these devices.Sb_(2)Te_(3)-based materials are outstanding p-type thermoelectric materials at room temperature.However,the thermoelectric properties of Sb_(2)Te_(3)-based thin films cannot meet the requirement of practical applications.The research background of thermoelectric materials is briefly introduced,the crystal structure of Sb_(2)Te_(3) is discussed,the preparation techniques of Sb_(2)Te_(3)-based thin films are outlined,and the methods of improving the power factor and reducing the thermal conductivity of Sb_(2)Te_(3)-based thin films are summarized.In particular,the effects of microstructure on thermoelectric properties are focused on to elucidate the mechanism of improving thermoelectric properties of the films,which includes defects,preferential orientation,nanoparticles,superlattice,organic-inorganic hybridization,and so on.In addition,the future research directions for Sb_(2)Te_(3)-based thermoelectric thin films are discussed.

关 键 词：热电薄膜 碲化锑 热电性能 功率因子 热导率 

分 类 号：TB34[一般工业技术—材料科学与工程]