Progress on rare-earth doped ZnO-based varistor materials  

作　　者：Feng JIANG Zhijian PENG Yanxu ZANG Xiuli FU 

机构地区：[1]School of Engineering and Technology,China University of Geosciences,Beijing 100083,P.R.China [2]School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,P.R.China

出　　处：《Journal of Advanced Ceramics》2013年第3期201-212,共12页先进陶瓷（英文）

基　　金：The authors would like to thank the financial support for this work from the National Natural Science Foundation of China(Grant Nos.61274015,11274052 and 51172030),the Transfer and Industrialization Project of Sci-Tech Achievement(Cooperation Project between University and Factory)from Beijing Municipal Commission of Education,and the Excellent Adviser Foundation in China University of Geosciences from the Fundamental Research Funds for the Central Universities.

摘　　要：Rare-earth(RE)doping can greatly enhance the voltage gradient of ZnO-based varistors,and their nonlinear coefficient,leakage current,energy absorption capability,through-current capability and residual voltage can also be improved to certain extent.In this review,the progress on RE-doped ZnO-based varistor materials in recent years was summarized.The mechanism of RE doping on the electrical performance of ZnO varistors was analyzed.The issues in exploring new ZnO-based varistor materials by RE doping were indicated,and the development trends in this area were proposed.

关 键 词：ZnO varistor rare-earth(RE) DOPING 

分 类 号：TM5[电气工程—电器]