Synthesis and characterization of high ceramic yield polycarbosilane precursor for SiC  

作　　者：Mangesh LODHE Narendra BABU A.SELVAM M.BALASUBRAMANIAN 

机构地区：[1]Department of Metallurgical and Materials Engineering,Indian Institute of Technology Madras,Chennai 600036,India [2]FRP Institute,Chennai 600032,India

出　　处：《Journal of Advanced Ceramics》2015年第4期307-311,共5页先进陶瓷（英文）

摘　　要：The polycarbosilane(PCS)precursor for SiC with high molecular weight and medium molecular weight distribution was synthesized from polydimethylsilane at normal pressure.The chemical formula,the number average molecular weight,and the polydispersivity index of the synthesized PCS are SiC_(1.94)H_(5.01)O_(0.028),1135,and 1.66,respectively,which can be attributed to the higher reaction temperature used for polymerization.The polymer to ceramic conversion of PCS was completed at 900℃with a ceramic yield of 85%.The crystallization started at 1100℃,and at 1200℃,well resolved peaks ofβ-SiC were formed with small amount ofα-cristobalite.The X-ray diffraction(XRD)and transmission electron microscopy(TEM)studies indicated the presence of nanocrystallineβ-SiC.

关 键 词：synthesis polycarbosilane(PCS) polymer-ceramic conversion X-ray diffraction(XRD) 

分 类 号：TQ1[化学工程]