Fabrication and electrical characteristics of flash-sintered SiO_(2)-doped ZnO-Bi_(2)O_(3)-MnO_(2) varistors  

作　　者：Pai PENG Yujun DENG Jingpeng NIU Liyi SHI Yunzhu MEI Sanming DU Juan LIU Dong XU 

机构地区：[1]Key Laboratory of Green Fabrication and Surface Technology of Advanced Metal Materials(Anhui University of Technology),Ministry of Education,Ma'anshan 243002,China [2]Key Laboratory of Etallurgical Emission Reduction&Resources Recycling(Anhui University of Technology),Ministry of Education,Ma'anshan 243002,China [3]Research Center of Nano Science and Technology,Shanghai University,Shanghai 200444,China [4]National United Engineering Laboratory for Advanced Bearing Tribology,Henan University of Science and Technology,Luoyang 471023,China

出　　处：《Journal of Advanced Ceramics》2020年第6期683-692,共10页先进陶瓷（英文）

基　　金：financially supported by National Natural Science Foundation of China(Grant Nos.51802003 and 51572113);State Key Laboratory of New Ceramic and Fine Processing Tsinghua University(No.KF201808);the Project National United Engineering Laboratory for Advanced Bearing Tribology(No.201912).

摘　　要：The dense ZnO-Bi_(2)O_(3)-MnO_(2)(ZBMS)varistors for x=0,1,2,3 wt% were fabricated by flash sintering method under the low temperature of 850℃ within 2 min.The sample temperature was estimated by a black body radiation model in the flash sintering process.The crystalline phase assemblage,density,microstructure,and electrical characteristics of the flash-sintered ZBMS varistors with different SiO_(2)-doped content were investigated.According to the XRD analysis,many secondary phases were detected due to the SiO_(2) doping.Meanwhile,the average grain size decrease with increasing SiO_(2)-doped content.The improved nonlinear characteristics were obtained in SiO_(2)-doped samples,which can be attributed to the ion migration and oxygen absorption induced by the doped SiO_(2).The flash-sintered ZBMS varistor ceramics for x=2 wt% exhibited excellent comprehensive electrical properties,with the nonlinear coefficient of 24.5,the threshold voltage and leakage current of 385 V·mm^(-1 )and 11.8μA,respectively.

关 键 词：flash sintering SiO_(2)additive ZBMS varistors electrical properties 

分 类 号：TM54[电气工程—电器]