A review on all-perovskite multiferroic tunnel junctions  

作　　者：Yuewei Yin Qi Li 

机构地区：[1]Department of Physics,Pennsylvania State University,University Park 16802,USA [2]Department of Physics,University of Science and Technology of China,Hefei 230026,China

出　　处：《Journal of Materiomics》2017年第4期245-254,共10页无机材料学学报（英文）

基　　金：The work at PSU was supported in part by the DOE(Grant No.DE-FG02-08ER4653);the NSF(Grant No.DMR-1411166);The work at USTC was supported by NSFC and NBRPC(2016YFA0300103).

摘　　要：Although the basic concept was proposed only about 10 years ago,multiferroic tunnel junctions(MFTJs)with a ferroelectric barrier sandwiched between two ferromagnetic electrodes have already drawn considerable interests,driven mainly by its potential applications in multi-level memories and electric field controlled spintronics.The purpose of this article is to review the recent progress of all-perovskite MFTJs.Starting from the key functional properties of the tunneling magnetoresistance,tunneling electroresistance,and tunneling electromagnetoresistance effects,we discuss the main origins of the tunneling electroresistance effect,recent progress in achieving multilevel resistance states in a single device,and the electrical control of spin polarization and transport through the ferroelectric polarization reversal of the tunneling barrier.

关 键 词：Multiferroic tunnel junction Interface magnetoelectric coupling Tunneling electroresistance effect Multi-state memory 

分 类 号：TN3[电子电信—物理电子学]