不同烧结温度La/Ce稀土离子掺杂CBN陶瓷的电性能研究  

Effects of sintering temperature on electrical properties of La/Ce rare-earth ions modified CBN ceramics

作　　者：彭志航 曾祥雄 向阳 曹峰[1] PENG Zhihang;ZENG Xiangxiong;XIANG Yang;CAO Feng(College of Aerospace Science and Engineering,National University of Defense Technology,Changsha 410073,Hunan,China;Northwest Institute of Nuclear Technology,Xi′an 710024,Shaanxi,China)

机构地区：[1]国防科技大学空天科学学院,湖南长沙410073 [2]西北核技术研究所,陕西西安710024

出　　处：《陕西师范大学学报（自然科学版）》2021年第4期54-60,共7页Journal of Shaanxi Normal University：Natural Science Edition

基　　金：国家自然科学基金(51802344)。

摘　　要：采用传统固相烧结工艺制备了多元稀土离子La/Ce掺杂CaBi_(2)Nb_(2)O_(9)(CBN)陶瓷,分析了不同烧结温度对陶瓷晶体结构、显微形貌以及电学性能的影响。X射线衍射分析数据表明:当烧结温度为1000~1150℃时,陶瓷物相结构表现出单一铋层状晶体结构;而当烧结温度为1200℃时,陶瓷中出现Ca_(2)Nb_(2)O_(7)的第二相杂质。随着烧结温度的增加,陶瓷的晶粒尺寸明显增大,陶瓷晶粒的显微形貌由圆球状向圆盘状变化。对不同烧结条件制备的掺杂CBN陶瓷样品的介电性能、直流电阻性能以及压电性能进行研究,发现随烧结温度的增加,掺杂CBN陶瓷的居里温度由935℃下降至915℃,高温(500℃)直流电阻率由3 MΩ·cm下降至0.76 MΩ·cm。烧结温度为1150℃时,La/Ce-CBN陶瓷性能最优,压电常数d 33达16.6 pC/N,850℃高温老化2 h后,d 33下降至15.1 pC/N,表现出良好的温度稳定性。Multi-rare-earth La/Ce ions modified CaBi_(2)Nb_(2)O_(9)(CBN)ceramics were prepared by a conventional solid state sintering method.The effects of different sinter temperatures on crystal structure,microstructure and electrical properties were investigated.The X-ray analysis data show that the specimens sintered in the temperature range of 1000-1150℃have a single bismuth-layered structural phase.A secondary phase corresponding Ca_(2)Nb_(2)O_(7)was detected for the ceramics sintered at 1200℃.The grain size significantly increases with an increase of sinter temperatures.The microstructure of ceramic grains changes from spherical to disk like morphologies.Moreover,the dielectric,dc resistivity and piezoelectric properties at different sintering temperature were studied.The Curie temperature of modified-CBN ceramics decreases from 935℃to 915℃with increasing sinter temperatures.Meanwhile,the dc resistivity at 500℃decreases from 3 MΩ·cm to 0.76 MΩ·cm.La/Ce-CBN ceramics sintered at 1150℃for 2 h possess good piezoelectric properties,with piezoelectric coefficient d 33 of 16.6 pC/N.The d 33 value decreases to 15.1 pC/N after annealing at 850 for 2 h,exhibiting a good piezoelectric temperature stability.

关 键 词：CaBi_(2)Nb_(2)O_(9) 压电 烧结 稀土离子掺杂 

分 类 号：TM282[一般工业技术—材料科学与工程]