一种平衡式GaN内匹配宽带功率放大器设计  

Design of a Balanced GaN Internally Matched Broadband Power Amplifier

作　　者：梁宸玮 钟世昌[1] LIANG Chenwei;ZHONG Shichang(Nanjing Electronic Devices Institute,Nanjing,210016)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2021年第3期176-181,共6页Research & Progress of SSE

摘　　要：基于南京电子器件研究所的0.5μm GaN HEMT工艺平台,研制了一款2~5 GHz宽带固态功率放大器。采用低通L-C匹配网络消除虚部阻抗,并利用λ/4线实现宽带实阻抗到目标阻抗50Ω的匹配,最后通过3 dB Lange耦合器实现宽带平衡式功率合成设计。测试结果表明,功放在48 V漏电压、1 ms周期、10%射频脉冲时,在2~5GHz频带内,输出功率大于50 dBm(100 W),最高输出功率达到51.2 dBm(132 W),最大功率附加效率52%,合成效率典型值大于85%,二次谐波抑制度大于18 dBc,杂波抑制度大于60 dBc。Based on 0.5 μm GaN HEMT process platform of Nanjing Electronic Devices Institute,a 2~5 GHz broadband solid-state power amplifier was developed. Low pass L-C matching network was used to eliminate imaginary part impedance,and a 1/4 impedance converter was used to achieve broadband real impedance to target impedance 50 Ω.The balanced power synthesis design was realized by 3 dB Lange coupler. The test results show that in the 2~5 GHz frequency band,under48 V leakage voltage,1 ms cycle and 10% RF pulse,the output power of the power amplifier is more than 50 dBm(100 W),the maximum output power is 51.2 dBm(132 W),the maximum PAE is52%,the typical synthetic efficiency is more than 85%,the second harmonic suppression is more than 18 dBc,and the clutter suppression is more than 60 dBc.

关 键 词：内匹配 超宽带 平衡式放大器 

分 类 号：TN72[电子电信—电路与系统]