一种适用于超高频标签芯片的低功耗电压基准电路  

A Low Power Voltage Reference for UHF RFID Tag Chip

作　　者：沈红伟 赵东艳 唐晓柯 李德建 冯曦 SHEN Hongwei;ZHAO Dongyan;TANG Xiaoke;LI Dejian;FENG Xi(Beijing Smartchip Microelectronics Technology Company Limited,Beijing,100192,CHN)

机构地区：[1]北京智芯微电子科技有限公司,北京100192

出　　处：《固体电子学研究与进展》2021年第3期223-228,共6页Research & Progress of SSE

摘　　要：提出了一种适用于超高频无源电子标签芯片的低功耗电压基准电路。电路采用N+注入栅的PMOS管和亚阈值区温度补偿技术。芯片采用TSMC 0.18μm CMOS混合工艺流片。测试结果表明:该芯片可以在1.2~2.4 V的电源电压范围下工作,1.2 V电源电压下电压基准电路静态功耗为60 nW。电路面积为0.01 mm2,TT/FF/SS工艺角无校准条件下输出电压温度系数为75×10^(-6)/℃。A low power voltage reference circuit for UHF RFID tag was proposed. PMOS transistor with N+doped gate and the subthreshold region temperature compensation technique were adopted. The chip was fabricated in a 0.18 μm mixed-signal CMOS process. Test results show that this chip operates with supply voltage ranging from 1.2 V to 2.4 V,and the voltage reference consumes 60 nW of quiescent power at 1.2 V supply voltage. The circuit area is 0.01 mm2,and the temperature coefficient of the bandgap is 75×10^(-6)/℃ at TT/FF/SS process corners without calibration.

关 键 词：射频识别 低功耗 电压基准 

分 类 号：TN43[电子电信—微电子学与固体电子学]