Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays  

作　　者：Qing Cai Haifan You Hui Guo Jin Wang Bin Liu Zili Xie Dunjun Chen Hai Lu Youdou Zheng Rong Zhang 

机构地区：[1]Key Laboratory of Advaneed Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China [2]Collaborative In novation Center for Optoelectronic Semiconductors and Efficient Devices,Department of Physics,Xiamen University,Xiamen 361005,China [3]lnstitute of Future Display Tech no logy,Tan Kah Kee Inno vati on Laboratory,Xiamen 361102,China

出　　处：《Light(Science & Applications)》2021年第6期976-1006,共31页光（科学与应用)（英文版）

基　　金：the National Key R&D Program of China(2016YFB0400903);the NSFC(61634002),and the NSAF(U1830109).

摘　　要：Solar-blind ultraviolet(UV)photodetectors(PDs)have attracted tremendous attention in the environmental,industrial,military,and biological fields.As a representative Ill-nitride material,AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties,such as tunable wide bandgaps for intrinsic UV detection.In recent decades,a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection.As integrated optoelectronic technology advances,AlGaN-based focal plane arrays(FPAs)are manufactured and exhibit outsta nding solar-blind imaging capability.Con sidering the rapid development of AlGaN detection techniques,this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs.First,the basic physical properties of AlGaN are presented.The epitaxy and p-type doping problems of AlGaN alloys are then discussed.Diverse PDs,including photoconductors and Schottky,metal-semiconductor-metal(MSM),p-i-n,and avalanche photodiodes(APDs),are dem on strated,and the physical mechanisms are analyzed to improve device performance.Additionally,this paper summarizes imaging technologies used with AlGaN FPAs in recent years.Benefit!ng from the development of AlGaN materials and optoelectronic devices,solar-blind UV detection technology is greeted with significant revolutions.

关 键 词：OPTOELECTRONIC ARRAYS ULTRAVIOLET 

分 类 号：TN23[电子电信—物理电子学]