外延缺陷对分布反馈半导体激光器可靠性的影响  

Influence of Epitaxial Material Defect on Reliability of DFB-LD

作　　者：张坤伟 焦梦丽[1] 曹晨涛 赵润[1] ZHANG Kun-wei;JIAO Meng-li;CAO Chen-tao;ZHAO Run(The 13th Research Institute,CETC)

机构地区：[1]中国电子科技集团公司第十三研究所

出　　处：《中国标准化》2021年第13期188-191,共4页China Standardization

摘　　要：通过对分布反馈半导体激光器(DFB-LD)外延片缺陷密度、芯片反向电压以及芯片可靠性三者关联关系的分析,推断出芯片反向电压与芯片可靠性的相关性。设计并通过试验证实反向电压绝对值低的芯片可靠性差,而反向电压满足一定判定标准的芯片早期失效率低且长期可靠性良好。本文证明反向电压测试可以用于DFB激光器芯片的测试标准,作为DFB激光器芯片可靠性的有效筛选手段。This paper analyzes the correlation among the defect density of the epitaxial wafer, reverse voltage and reliability of distributed feedback laser diodes(DFB-LD), and deduces the relationship of the reverse voltage and the reliability of chips. After a test is executed, it is proved that the chip with low absolute value of reverse voltage is not reliable enough to meet the requirements of use, while the chip with reverse voltage meeting certain standard has low early failure efficiency and better long-term reliability. It is also proved that the reverse voltage test can be used as a testing criterion and a reliability screening method for DFB laser chip.

关 键 词：分布反馈半导体激光器 反向电压 二次外延生长 外延缺陷密度 失效率 

分 类 号：TN248.4[电子电信—物理电子学]