Boosting energy storage performance of low-temperature sputtered CaBi_(2)Nb_(2)O_(9) thin film capacitors via rapid thermal annealing  

作　　者：Jing YAN Yanling WANG Chun-Ming WANG Jun OUYANG 

机构地区：[1]Key Laboratory for Liquid–Solid Structural Evolution and Processing of Materials(Ministry of Education),School of Materials Science and Engineering,Shandong University,Jinan 250061,China [2]Institute of Advanced Energy Materials and Chemistry,School of Chemistry and Chemical Engineering,Shandong Provincial Key Laboratory of Molecular Engineering,Qilu University of Technology(Shandong Academy of Sciences),Jinan 250353,China [3]College of Physics and Electronic Engineering,Qilu Normal University,Jinan 250013,China [4]Amperex Technology Limited,Ningde 352100,China [5]School of Physics,State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

出　　处：《Journal of Advanced Ceramics》2021年第3期627-635,共9页先进陶瓷（英文）

基　　金：the financial support of the National Natural Science Foundation of China(Grant Nos.51772175 and 51872166);the Nano Projects of Suzhou City(Grant No.ZXG201445);the support from the Seed Funding for Top Talents in Qilu University of Technology(Shandong Academy of Sciences);the International Cooperation Research Project of Qilu University of Technology(Grant No.QLUTGJHZ2018003);the Independent Innovation Foundation of Shandong University(Grant Nos.2018JC045 and 2017ZD008).

摘　　要：CaBi_(2)Nb_(2)O_(9) thin film capacitors were fabricated on SrRuO_(3)-buffered Pt(111)/Ti/Si(100)substrates by adopting a two-step fabrication process.This process combines a low-temperature sputtering deposition with a rapid thermal annealing(RTA)to inhibit the grain growth,for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis.By using this method,CaBi_(2)Nb_(2)O_(9) thin films with uniformly distributed nanograins were obtained,which display a large recyclable energy density Wrec≈69 J/cm^(3) and a high energy efficiencyη≈82.4%.A superior fatigue-resistance(negligible energy performance degradation after 10^(9) charge-discharge cycles)and a good thermal stability(from-170 to 150℃)have also been achieved.This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.

关 键 词：bismuth layer-structured ferroelectrics(BLSFs) calcium bismuth niobate(CaBi_(2)Nb_(2)O_(9)) nanograin films rapid thermal annealing(RTA) energy storage fatigue-resistance 

分 类 号：TM53[电气工程—电器] TB383.2[一般工业技术—材料科学与工程]