提高低阻器件电阻测量精度的改进伏阻法  

Improved Volt-Resistance Method to Improve Resistance Measurement Accuracy of Low Resistance Devices

作　　者：李文龙[1] 张康[1] LI Wenlong;ZHANG Kang(Xi’an Electromechanical Information Technology Research Institute, Xi’an 710065, China)

机构地区：[1]西安机电信息技术研究所,西安710065

出　　处：《兵器装备工程学报》2021年第S01期317-320,324,共5页Journal of Ordnance Equipment Engineering

摘　　要：利用高精密金属箔电阻作为基准电阻,合理分配基准电阻与待测低阻器件的比值。由于电压的测量与测量挡位匹配,基准电阻与待测低阻器件两端的电压比等于基准电阻与待测电阻比,从而计算出低阻器件的阻值。验证结果表明:通过改进伏阻法,用万用表直流电压的伏特挡位测量基准电阻两端电压,用毫伏挡来测量低阻器件两端电压,可获得低阻器件高低温条件下的较高精度电阻值。In order to solve the problems of using multimeter ohms to directly measure the resistance of fuze low-resistance devices,and to measure the accurate resistance of low-resistance devices under high and low temperature conditions,an improved volt-resistance method was proposed to measure the resistance of low-resistance devices.The method for indirect measurement method,using high precision metal foil resistance as a benchmark resistance,reasonable allocation base resistance and low resistance ratio of the device under test,measure the voltage matching and measurement of gear,benchmark resistance and low resistance at the ends of the device under test voltage benchmark ratio is equal to the ratio of the resistance and the resistance under test,calculate the value of low resistance device.The verification results show that by improving the volt-resistance method,the voltage at both ends of the reference resistor is measured by using the voltage-tap of the DC voltage of the multimeter,and the voltage at both ends of the low-resistance device is measured by using the ml volt.The high-precision resistance value of the low-resistance device can be obtained by indirect measurement.

关 键 词：引信 低阻器件 高精密金属箔电阻 改进伏阻法 

分 类 号：TJ4[兵器科学与技术—火炮、自动武器与弹药工程]