MOCVD法生长二维范德华材料的研究进展  

Research Progress of Two-Dimensional van der Waals Materials Grown by MOCVD

作　　者：柳鸣 郭伟玲[1] 孙捷 Liu Ming;Guo Weiling;Sun Jie(Key Laboratory of Opto-Electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China)

机构地区：[1]北京工业大学光电子技术教育部重点实验室,北京100124 [2]福州大学物理与信息工程学院,福州350108

出　　处：《半导体技术》2021年第7期497-503,共7页Semiconductor Technology

基　　金：国家重点基础研究发展计划资助项目(2018YFA0209000)。

摘　　要：二维范德华材料凭借其优异的光学和电学特性,自被发现以来一直作为延续集成电路摩尔定律的重要基础电子材料而备受关注。通过机械剥离的方法得到高质量的二维材料进行实验室层面的研究工作已经不能满足现阶段的需要。采用金属有机化学气相沉积(MOCVD)技术可以得到高质量的大面积二维范德华材料,并具有生长层数和成核密度可控的优势。以过渡金属硫化物(TMDC)为例,分别从生长条件、金属有机源材料、衬底、催化剂等方面综述了采用MOCVD技术生长二维范德华材料的研究进展,同时讨论了二维材料的范德华异质结构的特性及应用。利用MOCVD技术优势可以推动二维范德华材料的大规模应用。最后总结了MOCVD法生长二维范德华材料现阶段的优势与不足,并对其未来的发展进行了展望。Due to the excellent optical and electrical properties of the two-dimensional van der Waals material,it has attracted much attention since it is discovered as an important basic electronic material to continue Moore′s law of integrated circuits.High-quality two-dimensional materials are obtained by mechanical stripping for laboratory research,the research has no longer meet the needs of the present stage.High-quality large-area two-dimensional van der Waals materials can be obtained by metal organic chemical vapor deposition(MOCVD),which has the advantages of controllable growth layers and nucleation density.Taking transition-metal dichalcogenide(TMDC)as an example,the research progress of two-dimensional van der Waals materials grown by MOCVD is reviewed from the aspects of growth conditions,metal organic source materials,substrates and catalysts,and the properties and applications of van der Waals heterostructures of two-dimensional materials are also discussed.Using the advantages of MOCVD technology can promote the large-scale application of two-dimensional van der Waals materials.Finally,the advantages and disadvantages of two-dimensional van der Waals materials grown by MOCVD are summarized,and their future development is prospected.

关 键 词：金属有机化学气相沉积(MOCVD) 二维范德华材料 过渡金属硫化物(TMDC) MoS_(2) 异质结 

分 类 号：TN304.2[电子电信—物理电子学]