大功率倒装单片集成LED芯片的自隔离散热技术  

Self-Isolation Heat Dissipation Technology of High Power Flip-Chip Monolithically Integrated LED Chip

作　　者：吴林枫 唐文婷 陈宝 易翰翔 李玉珠 王保兴 蔡勇 Wu Linfeng;Tang Wenting;Chen Baojin;Yi Hanxiang;Li Yuzhu;Wang Baoxing;Cai Yong(School of Electronics and Information Engineering,Hangzhou Dianzi University,Hangzhou 310018,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;Ningbo Sky Torch OptoelectricTechnology Co.,Ltd.,Ningbo 315300,China;Guangdong Deli Optoelectronics Co.,Ltd.,Jiangmen 529020,China)

机构地区：[1]杭州电子科技大学电子信息学院,杭州310018 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123 [3]宁波天炬光电科技有限公司,浙江宁波315300 [4]广东德力光电有限公司,广东江门529020

出　　处：《半导体技术》2021年第7期565-571,共7页Semiconductor Technology

摘　　要：提出采用自隔离散热技术解决大功率倒装单片集成LED芯片散热与绝缘之间的矛盾问题。基于自隔离散热技术原理,利用微纳加工技术,通过在AlN陶瓷基板上生长隔离金属岛制备自隔离散热基板。采用多胞串并联网络结构设计大功率倒装单片集成LED芯片,芯片尺寸为1.5 mm×4.5 mm。在200 mA的驱动电流下,大功率倒装单片集成LED芯片的正向电压为8.3 V,反向漏电流小于100 nA。当输入电流为2 A时,大功率倒装单片集成LED芯片的输入功率为20 W,其最大光输出功率为8.3 W,插墙效率为42.08%,峰值热阻约为1.23 K/W,平均热阻约为1.17 K/W。The self-isolation heat dissipation technology was proposed to solve the contradiction between heat dissipation and insulation of high power flip-chip monolithically integrated LED chip.Based on the principle of self-isolation heat dissipation technology,the self-isolation heat dissipation substrate was prepared by growing isolated metal islands on the AlN ceramic substrate using micro-nano fabrication technology.The high power flip-chip monolithically integrated LED chips were designed using multi-cell series and parallel structures,and the chip size was 1.5 mm×4.5 mm.At the driving current of 200 mA,the forward voltage of the high power flip-chip monolithically integrated LED chip is 8.3 V,and the reverse leakage current is less than 100 nA.When the input current is 2 A,the input power of the high power flip-chip monolithically integrated LED chip is 20 W,and the maximum optical output power of the chip is 8.3 W,the wall-plug efficiency can reach 42.08%,the maximum thermal resistance is about 1.23 K/W and the average thermal resistance is about 1.17 K/W.

关 键 词：自隔离散热技术 大功率倒装单片集成LED 光输出功率 插墙效率 热阻 

分 类 号：TN312.8[电子电信—物理电子学] TN305.94