检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:Zheng-Yu Xiao Zhi-Yong Quan Wei Zhang Dong Li Hui-Hui Liu Guo-Wei Zhou Jun Zhang Fei Zhang Xia Liu Xiao-Hong Xu Ming-Zhong Wu
机构地区:[1]Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education,School of Chemistry and Materials Science,Shanxi Normal University,Linfen 041004,China [2]Research Institute of Materials Science,Shanxi Normal University,Linfen 041004,China [3]Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology,Linfen 041004,China [4]Department of Physics,Colorado State University,Fort Collins,Colorado 80523,USA
出 处:《Science China(Physics,Mechanics & Astronomy)》2021年第8期98-106,共9页中国科学:物理学、力学、天文学(英文版)
基 金:supported by the National Key R&D Program of China(Grant No.2017YFB0405703);the National Natural Science Foundation of China(Grant Nos.51571136,61434002,51871137,and 51901118);the Graduate Student Innovation Project in Shanxi Province(Grant No.2020BY082)。
摘 要:The topological Hall effect(THE) as a powerful probe for the experimental observation of topological spin textures, such as magnetic skyrmions, has been observed in a wide variety of distinct material systems. However, limited experimental observations have been reported for antiferromagnetic(AFM) materials. Here, the THE signals in the AFM state were observed in compensated ferrimagnetic thin films interfaced with heavy metals at the magnetization compensation temperature(TM).Ferrimagnetic CoTb thin films grown on Pt thin films were used in the experiments. The Co Tb films exhibited a magnetization compensation point at which the moments of Co and Tb sublattices canceled each other, giving rise to the AFM state. The temperature(T)-dependent Hall measurements showed anomalous Hall effect(AHE) and THE responses at T≠T_(M) but pure THE responses at T=T_(M). Control measurements and analyses suggest that the THE responses are associated with interfacial Dzyaloshinskii-Moriya interaction(DMI) rather than the overlapping of different AHE signals in the structure. This work presents the first-ever observation of interfacial DMI-induced THE in AFM metal trilayered systems and demonstrates a new approach for electrical reading of chiral spin textures in AFM thin film-based heterostructures.
关 键 词:topological Hall effect antiferromagnetic state chiral spin textures
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.222