具有N梯度浓度的碳自掺杂氮化碳薄膜的性能研究  

Study on the properties of carbon self-doped carbon nitride thin films with N gradient concentration

作　　者：沈洪雪 金克武 姚婷婷 王天齐 SHEN Hong-xue;JIN Ke-wu;YAO Ting-ting;WANG Tian-qi(Bengbu Design&Research Institute for Glass Industry,China Triumph International Engineering Co.,Ltd.,Bengbu 233018,China;State Key Laboratory for Advanced Technology of Float Glass,Bengbu 233018,China)

机构地区：[1]中建材蚌埠玻璃工业设计研究院有限公司,安徽蚌埠233018 [2]浮法玻璃新技术国家重点实验室,安徽蚌埠233018

出　　处：《化学工程师》2021年第6期12-14,64,共4页Chemical Engineer

基　　金：安徽省重点研究和开发计划项目(202004b11020020)。

摘　　要：利用实验室自有大型中试线磁控溅射设备,以纯度为99.99%的石墨为靶材,以Ar、N2为溅射和反应气体,采用直流磁控溅射法,制备了一系列碳自掺杂氮化碳薄膜。利用XRD、SEM、拉曼光谱等检测手段对薄膜的成分、形貌、光学性能以及电阻率等进行表征。结果表明:溅射过程中通过对N进行浓度梯度控制,成功实现了碳自掺杂,同时氮化碳薄膜已初具晶型;碳自掺杂很好的调节了薄膜的电阻率,其值可根据需要在很宽的范围内(超导至高阻)调节;透过率基本维持在87%以上。同时氮的掺入对薄膜碳也起到了稳定的作用。Using the large scale pilot line magnetron sputtering equipment in the laboratory,a series of C self-doped carbon nitride thin films were prepared by DC sputtering with 99.99%graphite as the target,Ar and N2 as the sputtering gas and reactive gas.The composition,morphology,optical properties and resistivity of the films were characterized by XRD,SEM and Raman spectroscopy.The results showed that C self-doping is successfully realized by controlling the concentration gradient of N during sputtering,and the crystalline form of CN thin film has been formed.C self-doping well adjust the resistivity of the film,its value can be adjusted in a wide range(superconductivity to high resistance)according to the need;The transmission rate remained above 87%.At the same time,the addition of N also plays a stabilizing role on the C in the film.

关 键 词：碳自掺杂 CN薄膜 sp3杂化 梯度浓度 

分 类 号：TQ174[化学工程—陶瓷工业]