原子层沉积Al_(2)O_(3)保护层氢终端金刚石MISFETs的电学特性  

Electrical Characteristics of MISFETs with AlO Atomic Layer Deposited as Hydrogen-Terminated Diamond Protective Layer

作　　者：张鹏飞 陈伟东[1,3] 张少鹏[2] 闫淑芳 马文 王宏兴[2] Zhang Pengfei;Chen Weidong;Zhang Shaopeng;Yan Shufang;Ma Wen;Wang Hongxing(College of Materials Science and Engineering,Inner Mongolia University of Technology,Hohhot 010051,China;Institute of Wide Band Gap Semiconductors,Xi'an Jiaotong University,Xi'an 710049,China;Inner Mongolia Key Laboratory of Thin Film and Coatings,Hohhot 010051,China)

机构地区：[1]内蒙古工业大学材料科学与工程学院,内蒙古呼和浩特010051 [2]西安交通大学宽禁带半导体材料与器件研究中心,陕西西安710000 [3]内蒙古自治区薄膜与涂层重点实验室,内蒙古呼和浩特010051

出　　处：《稀有金属材料与工程》2021年第6期1946-1949,共4页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China (51964035);Natural Science Foundation of Inner Mongolia Autonomous Region (2019MS0520);Natural Science Foundation of Inner Mongolia Autonomous Region (2020LH05017)。

摘　　要：研究了Zr-Si-N氢终端金刚石(H-diamond)绝缘栅场效应晶体管(MISFET)在有无Al_(2)O_(3)保护层情况下的电学特性。分别采用原子层沉积法(ALD)和射频溅射法(RF)制备了Al_(2)O_(3)保护层和Zr-Si-N栅介质层。MISFETs的转移特性曲线表明,其栅阈值电压在有无Al_(2)O_(3)保护的情况下从-2.5 V变化到3 V,表明器件从常关型转换为常开型。输出和转移特性曲线揭示了氧化铝的存在保护了氢终端,使其免受磁控溅射过程的损伤。The interface properties of Zr-Si-N/hydrogen-terminated diamond(H-diamond) metal insulator semiconductor field transistors(MISFETs) with and without Al_(2)O_(3) protective layer were studied. The Al_(2)O_(3) protection layer and Zr-Si-N insulation layer were deposited by atomic layer deposition(ALD) and radio frequency(RF) sputter methods, respectively. The transfer characteristics of the MISFETs show that the gate threshold voltage varies from -2.5 V to 3 V with and without Al_(2)O_(3) layer, which indicates that the devices switch from normally off to normally on operation. The output and transfer properties reveal the preservation of hydrogen termination because of the Al_(2)O_(3) layer.

关 键 词：场效应晶体管 保护层 Zr-Si-N/Al_(2)O_(3) 

分 类 号：TB306[一般工业技术—材料科学与工程] TN304[电子电信—物理电子学]