纳秒激光辐照硅基PIN光电二极管的瞬态响应退化  

Degradation of transient response characteristics of silicon-based PIN photodiode irradiated by nanosecond laser

作　　者：姚猛 叶继飞 李兰 高贺岩 YAO Meng;YE Jifei;LI Lan;GAO Heyan(State Key Laboratory of Laser Propulsion&Application,Department of Aerospace Science and Technology,Aerospace Engineering University,Beijing 101416,China)

机构地区：[1]航天工程大学宇航科学与技术系,激光推进及其应用国家重点实验室,北京101416

出　　处：《激光杂志》2021年第7期9-12,共4页Laser Journal

基　　金：1800050387。

摘　　要：研究短脉冲激光辐照硅基光电探测器的瞬态响应的变化规律,使用脉冲宽度为8 ns的纳秒激光辐照工作在偏置电压3.2 V下的硅基PIN光电二极管,测量了该二极管在不同能量密度辐照下的单脉冲响应特性。分析激光辐照特性结果表明,入射激光能量密度从55.22 n J/cm^(2)到227.1μJ/cm^(2)的范围内变化,响应信号下降沿的时间逐渐变大,导致辐照后的脉冲响应信号出现展宽现象,意味着二极管的瞬态响应特性发生了退化,并且器件在加载反向电压信号回复速度呈两相变化,两阶段下降沿的数据的绝对增幅和相对增幅分别为(378μs,208%)和(43μs,43%),比较发现第一段下降沿起着信号展宽的主导作用。The transient response law of the short pulse laser irradiated silicon-based photodetectors was studied,and the single pulse response characteristics of the diode under different energy density irradiation were measured by using the silicon-based PIN photodiode working at the bias voltage of 3.2 V with a pulse width of 8 ns.The results of the analysis of laser irradiation show that the energy density of the incident laser changes from 55.22 nJ/cm^(2)to 227.1μJ/cm^(2),and the time of the response signal drops gradually increases,resulting in the widening of the pulse response signal after irradiation,which means that the transient response characteristics of the diode have deteriorated.,and the device in the loading reverse voltage signal response speed is two-phase changes,the two-stage drop edge of the absolute increase and relative increase of the data(378μs,208%)and(43μs,43%),the comparison found that the first stage of the falling edge plays a leading role in signal widening.

关 键 词：短脉冲 激光辐照 瞬态响应 展宽现象 输运过程 

分 类 号：TN249[电子电信—物理电子学]