Abrasive-free polishing of hard disk substrate with H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry  

作　　者：Weitao ZHANG Hong LEI 

机构地区：[1]Research Center of Nano-Science and Nano-Technology,Shanghai University,Shanghai 200444,China

出　　处：《Friction》2013年第4期359-366,共8页摩擦（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.51175317);Research Fund for the Doctoral Program of Higher Education of China(Grant No.20123108110016);Tribology Science Fund of State Key Laboratory of Tribology(No.SKLTKF11B06).

摘　　要：The effect of tert-butyl hydroperoxide-sodium pyrosulfite((CH3)3COOH-Na2S2O5)as an initiator system in H2O2-based slurry was investigated for the abrasive-free polishing(AFP)of a hard disk substrate.The polishing results show that the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry exhibits a material removal rate(MRR)that is nearly 5 times higher than that of the H2O2 slurry in the AFP of the hard disk substrate.In addition,the surface polished by the slurry containing the initiator exhibits a lower surface roughness and has fewer nano-asperity peaks than that of the H2O2 slurry.Further,we investigate the polishing mechanism of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry.Electron spin-resonance spectroscopy and auger electron spectrometer analyses show that the oxidizing ability of the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry is much greater than that of the H2O2 slurry.The results of potentiodynamic polarization measurements show that the hard disk substrate in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry can be rapidly etched,and electrochemical impedance spectroscopy analysis indicates that the oxide film of the hard disk substrate formed in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry may be loose,and can be removed easily during polishing.The better oxidizing and etching ability of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry leads to a higher MRR in AFP for hard disk substrates.

关 键 词：abrasive-free polishing material removal rate initiator hard disk substrate 

分 类 号：TG1[金属学及工艺—金属学]