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作 者:黄继伟[1] 朱嘉昕 HUANG Jiwei;ZHU Jiaxin(Fujian Integrated Circuit Design Center,Fuzhou University,Fuzhou 350108,P.R.China)
机构地区:[1]福州大学福建省集成电路设计中心,福州350108
出 处:《微电子学》2021年第3期314-318,共5页Microelectronics
基 金:国家自然科学基金面上项目(61774035)。
摘 要:提出了一种采用0.13μm SiGe工艺制作的77GHz功率放大器。该放大器采用两路合成结构提高输出功率,采用两级差分放大结构提高增益。功率级选择Cascode结构,提升功率级输出阻抗,便于匹配。驱动级选择共射极加中和电容的结构,便于提升增益。在输入端,通过两路耦合线巴伦结构进行功率分配,得到两对差分信号,经过两路放大之后再通过两路耦合线巴伦结构进行功率合成,最后输出信号,级间匹配采用变压器匹配。该功率放大器采用ADS软件仿真。结果表明,在77GHz的工作频点处,小信号增益为19.6dB,峰值功率附加效率为11%,饱和输出功率为18.5dBm。A 77GHz power amplifier based on a 0.13μm SiGe process was presented.A two-way combined structure was used to increase the output power,and a two-stage differential structure was used to increase the gain.The cascode structure was selected for the power stage to improve the output impedance and facilitate the matching.The structure of common emitter stage with neutralizing capacitor was selected for the drive stage to increase the gain.Two pairs of differential signals were obtained from the input through the Balun power divider of two-way coupled lines,which were amplified by two channels,and were output by the combination of Balun power combiner of two-way coupled lines.Transformer matching was adopted for inter-stage matching.The proposed power amplifier was simulated by the ADS software.Simulation results showed that the small signal gain was 19.6 dB,the peak power additional efficiency was 11%,and the saturated output power was 18.5dBm at 77GHz.
分 类 号:TN722.75[电子电信—电路与系统]
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