一种快速开启的低触发改进型DTSCR  

An Improved Fast Turn-on Low-Trigger DTSCR

作　　者：姜桂军 杜飞波 刘继芝[1] 刘志伟[1] JIANG Guijun;DU Feibo;LIU Jizhi;LIU Zhiwei(School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,P.R.China)

机构地区：[1]电子科技大学电子科学与工程学院,成都610054

出　　处：《微电子学》2021年第3期409-412,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61874098);中央高校基本业务费资助项目(ZYGX2018J025);四川省平台建设资助项目(18PTDJ0053);广东省基础与应用基础研究基金资助项目(2019A1515110499)。

摘　　要：提出了一种快速开启的低触发改进型DTSCR(MDTSCR)。该MDTSCR是在传统DTSCR基础上加入电流增益放大模块,大幅提升了寄生双极型晶体管的电流增益,降低触发电压,提高了器件的开启速度。实验结果表明,在28nm CMOS工艺下,与传统DTSCR相比,该MDTSCR的开启时间缩短了52%,触发电压从5.5V下降到4.5V。该MDTSCR通过调整二极管数目适应28nm CMOS工艺不同的设计窗口,获得了最优的防护性能。A fast turn-on low-trigger improved DTSCR(MDTSCR)was proposed.Based on the traditional DTSCR,the MDTSCR added a current gain amplifier module,which greatly had improved the current gain of the parasitic bipolar junction transistor,reduced the trigger voltage,and improved the opening speed of the device.The experimental results showed that,compared with traditional DTSCRs,the turn-on time of the MDTSCR was reduced by 52%,and the trigger voltage was decreased from 5.5Vto 4.5Vunder a 28nm CMOS process.The MDTSCR achieved a best protection performance by adjusting the number of diodes to adapt to the different design windows at 28nm CMOS process.

关 键 词：DTSCR 电流增益 导通速度 触发二极管串 

分 类 号：TN35[电子电信—物理电子学] TN432