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作 者:Jiu-Lin Yang Guo-Ying Feng Du-Xin Qing Ya-Jie Wu Yun Luo Jian-Jun Wang 杨久林;冯国英;卿杜鑫;吴雅婕;罗韵;王建军(Institute of Laser&Micro/Nano Engineering,College of Electronics and Information Engineering,Sichuan University,Chengdu 610064,China;Research Center of Laser Fusion,China Academy of Engineering Physics,Mianyang 621900,China)
机构地区:[1]Institute of Laser&Micro/Nano Engineering,College of Electronics and Information Engineering,Sichuan University,Chengdu 610064,China [2]Research Center of Laser Fusion,China Academy of Engineering Physics,Mianyang 621900,China
出 处:《Chinese Physics B》2021年第7期289-293,共5页中国物理B(英文版)
基 金:the National Natural Science Foundation of China(Grant No.U1730141)。
摘 要:High-quality Fe-doped Zn S films have been fabricated by electron beam evaporation.After the doping,the fabricated films still maintain the preferential crystalline orientation and phase purity of the host Zn S.According to the observation of surface morphology,the root mean-square roughness of the samples increases slightly with the increase of doping content.All of the prepared samples are in cubic zinc blende structure of Zn S.Transmission spectrum confirms a more obvious dip near 3μm with higher dopant concentration and it can be attributed to the typical^(5)E→^(5)T_(2)transition of Fe^(2+).Fe-doped Zn S film is also successfully used for Q-switched Er:ZBLAN fiber laser.
关 键 词:Fe-doped ZnS film electron beam evaporation Q-SWITCHING Er:ZBLAN
分 类 号:TN248[电子电信—物理电子学] TB383.2[一般工业技术—材料科学与工程]
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