Fabrication of GaAs/SiO_(2)/Si and GaAs/Si heterointerfaces by surface-activated chemical bonding at room temperature  

作　　者：Rui Huang Tian Lan Chong Li Jing Li Zhiyong Wang 黄瑞;兰天;李冲;李景;王智勇(Institute of Advanced Technology on Semiconductor Optics&Electronics,Institute of Laser Engineering,Beijing University of Technology,Beijing 100124,China;College of Microelectronics,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]Institute of Advanced Technology on Semiconductor Optics&Electronics,Institute of Laser Engineering,Beijing University of Technology,Beijing 100124,China [2]College of Microelectronics,Beijing University of Technology,Beijing 100124,China

出　　处：《Chinese Physics B》2021年第7期433-438,共6页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.61505003 and 61674140);the Beijing Education Commission Project(Grant No.SQKM201610005008);Beijing Postdoctoral Research Foundation(Grant No.2020-Z2-043)。

摘　　要：The room-temperature(RT)bonding mechanisms of Ga As/Si O_(2)/Si and Ga As/Si heterointerfaces fabricated by surface-activated bonding(SAB)are investigated using a focused ion beam(FIB)system,cross-sectional scanning transmission electron microscopy(TEM),energy dispersive x-ray spectroscopy(EDX)and scanning acoustic microscopy(SAM).According to the element distribution detected by TEM and EDX,it is found that an intermixing process occurs among different atoms at the heterointerface during the RT bonding process following the surface-activation treatment.The diffusion of atoms at the interface is enhanced by the point defects introduced by the process of surface activation.We can confirm that through the point defects,a strong heterointerface can be created at RT.The measured bonding energies of Ga As/Si O_(2)/Si and Ga As/Si wafers are 0.7 J/m^(2)and 0.6 J/m^(2).The surface-activation process can not only remove surface oxides and generate dangling bonds,but also enhance the atomic diffusivity at the interface.

关 键 词：surface-activation bonding energy-dispersive x-ray spectroscopy intermix point defects 

分 类 号：TN304[电子电信—物理电子学]