基于源极电感检测法的SiC MOSFET短路保护电路研究  

Research on Short-circuit Protection Circuit of SiC MOSFET Based on Source Inductance Detection

作　　者：李官军 卢乙 殷实 余豪杰 李先允[2] 殷帆 LI Guanjun;LU Yi;YIN Shi;YU Haojie;LI Xianyun;YIN Fan(China Electric Power Research Institute,Nanjing 210003,Jiangsu,China;School of Electric Power Engineering,Nanjing Institute of Technology,Nanjing 211167,Jiangsu,China)

机构地区：[1]中国电力科学研究院有限公司,江苏南京210003 [2]南京工程学院电力工程学院,江苏南京211167

出　　处：《电气传动》2021年第15期16-19,24,共5页Electric Drive

基　　金：江苏省储能变流及应用工程技术研究中心实验室开放基金(XNY1908005);江苏省重点研发计划(BE2018130);江苏省普通高校研究生科研创新计划(SJCX19-0534)。

摘　　要：碳化硅金属氧化物半导体场效应晶体管(SiCMOSFET)凭借高工作温度、高开关频率和低导通损耗等优点,被广泛应用于高压、高温和高工作频率场合,但SiCMOSFET的短路耐受时间较小,仅为2~5μs,这对SiCMOSFET的短路保护电路提出了更高的要求。首先总结分析SiCMOSFET短路故障特性,然后基于源极电感检测法设计一款SiCMOSFET短路保护电路并简要分析其工作原理,最后搭建实验平台进行实验验证。实验结果表明,所设计的短路保护电路结构简单,当SiCMOSFET发生硬开关短路故障或负载短路故障时,保护电路能够在故障发生的1μs内关断器件,保证器件的安全运行。Silicon carbide metal oxide semiconductor field effect transistor(SiC MOSFET)is extensively used in high voltage,high temperature,and high operation frequency applications due to the advantages such as high operating temperature,high switching frequency,and low conduction loss.However,the short-circuit withstand time of SiC MOSFET is short,only 2~5μs,which puts forward higher requirements for the shout-circuit protection circuit of SiC MOSFET.First,the SiC MOSFET short-circuit fault characteristics were summarized and analyzed.Then a SiC MOSFET short-circuit protection circuit was designed based on the source inductance detection method and the working principle was briefly analyzed.Finally,an experimental platform was established to verify the effectiveness of the deigned short-circuit protection circuit.The experimental results show that the designed short circuit protection circuit has a simple structure,and can turn off the device within 1μs when the SiC MOSFET meets hard-switch short-circuit fault or load short-circuit fault to ensure the safe operation of the device.

关 键 词：碳化硅金属氧化物半导体场效应晶体管 短路特性 源极电感检测法 短路保护 

分 类 号：TM13[电气工程—电工理论与新技术]