Bending-Induced Conductance Increase in Individual Semiconductor Nanowires and Nanobelts  

作　　者：Xiaobing Han Guangyin Jing Xinzheng Zhang Renmin Ma Xuefeng Song Jun Xu Zhimin Liao NingWang Dapeng Yu 

机构地区：[1]State Key Laboratory for Mesoscopic Physics,and Electron Microscopy Laboratory,Department of Physics,Peking University,Beijing 100871,China [2]Physics Department,Hong Kong University of Science and Technology,Hong Kong,China

出　　处：《Nano Research》2009年第7期553-557,共5页纳米研究（英文版）

基　　金：by National Natural Science Foundation of Chian(NSFC)(90606023,20731160012,10804003),973 program(2007CB936202/04,2009CB623703,MOST)of China and NSFC/RGC(N HKUST615/06).D.P.Y.is supported by the Cheung Kong scholar program,and by the Research Fund for the Doctoral Program of Higher Education(RFDP),Ministry of Education,China.

摘　　要：Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts.Significant conductance increases of up to 113%were observed on bending individual ZnO nanowires or CdS nanobelts.This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements,such as using different manipulating tips(silicon,glass or tungsten)to bend the nanowires or nanobelts,and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.

关 键 词：ZnO nanowires bending strain PIEZORESISTANCE conductance enhancement 

分 类 号：TB3[一般工业技术—材料科学与工程]