Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing  

作　　者：Vincenzo Pusino Michael J.Strain Marc Sorel 

机构地区：[1]School of Engineering,University of Glasgow—Rankine Building,Oakfield Avenue,Glasgow G128LT,UK [2]Institute of Photonics,University of Strathclyde,Glasgow G40NW,UK

出　　处：《Photonics Research》2014年第6期186-189,共4页光子学研究（英文版）

基　　金：the technical staff of the James Watt Nanofabrication Centre at Glasgow University and discussions with Salvador Balle.V.Pusino acknowledges partial financial support from the GRPE program and EPSRC under grant agreement EP/P504937/1.

摘　　要：Passive mode-locking in semiconductor lasers in a Fabry–Perot configuration with a bandgap blueshift applied to the saturable absorber(SA)section has been experimentally characterized.For the first time a fully post-growth technique,quantum well intermixing,was adopted to modify the material bandgap in the SA section.The measurements showed not only an expected narrowing of the pulse width but also a significant expansion of the range of bias conditions generating a stable train of optical pulses.Moreover,the pulses from lasers with bandgap shifted absorbers presented reduced chirp and increased peak power with respect to the nonshifted case.

关 键 词：bandgap saturable LASERS 

分 类 号：TN2[电子电信—物理电子学]