Crystallographically Selective Nanopatterning of Graphene on SiO_(2)  

作　　者：Péter Nemes-Incze Gábor Magda Katalin Kamarás LászlóPéter Biró 

机构地区：[1]Research Institute for Technical Physics and Materials Science,PO Box 49,H-1525 Budapest,Hungary [2]Budapest University of Technology and Economics(BME),PO Box 91,H-1521 Budapest,Hungary [3]Research Institute for Solid State Physics and Optics,Hungarian Academy of Sciences,PO Box 49,H-1525 Budapest,Hungary

出　　处：《Nano Research》2010年第2期110-116,共7页纳米研究（英文版）

基　　金：Financial support by hungarian scientific research fund-national office for research and technology(OTKA-NKTH)grants Nos.67793,67851,and 67842 is acknowledged.

摘　　要：Graphene has many advantageous properties,but its lack of an electronic band gap makes this two-dimensional material impractical for many nanoelectronic applications,for example,field-effect transistors.This problem can be circumvented by opening up a confinement-induced gap,through the patterning of graphene into ribbons having widths of a few nanometres.The electronic properties of such ribbons depend on both their size and the crystallographic orientation of the ribbon edges.Therefore,etching processes that are able to differentiate between the zigzag and armchair type edge terminations of graphene are highly sought after.In this contribution we show that such an anisotropic,dry etching reaction is possible and we use it to obtain graphene ribbons with zigzag edges.We demonstrate that the starting positions for the carbon removal reaction can be tailored at will with precision.

关 键 词：GRAPHENE atomic force microscopy(AFM) ETCHING NANORIBBON ZIGZAG 

分 类 号：TB3[一般工业技术—材料科学与工程]