Insulator-to-conductor transition driven by the Rashba–Zeeman effect  

作　　者：Lingling Tao Evgeny Y.Tsymbal 

机构地区：[1]Department of Physics and Astronomy&Nebraska Center for Materials and Nanoscience,University of Nebraska,Lincoln,NE 68588,USA

出　　处：《npj Computational Materials》2020年第1期247-253,共7页计算材料学（英文）

基　　金：This research was supported by the National Science Foundation through the E2CDA program(grant ECCS-1740136)and the Semiconductor Research Corporation(SRC)through the nCORE program.

摘　　要：The Rashba effect has recently attracted great attention owing to emerging physical properties associated with it.The interplay between the Rashba effect and the Zeeman effect,being produced by the exchange field,is expected to broaden the range of these properties and even result in novel phenomena.Here we predict an insulator-to-conductor transition driven by the Rashba–Zeeman effect.We first illustrate this effect using a general Hamiltonian model and show that the insulator-to-conductor transition can be triggered under certain Rashba and exchange-field strengths.

关 键 词：EFFECT ZEEMAN conductor 

分 类 号：O46[理学—电子物理学]