Field-free spin-orbit torque perpendicular magnetization switching in ultrathin nanostructures  

作　　者：Minyi Dai Jia-Mian Hu 

机构地区：[1]Department of Materials Science and Engineering,University of Wisconsin-Madison,Madison,WI 53705,USA

出　　处：《npj Computational Materials》2020年第1期1004-1013,共10页计算材料学（英文）

基　　金：The simulations were performed using Bridges at the Pittsburgh Supercomputing Center through allocation TG-DMR180076;which is part of the Extreme Science and Engineering Discovery Environment(XSEDE)and supported by NSF grant ACI-1548562.

摘　　要：Magnetic-field-free current-controlled switching of perpendicular magnetization via spin-orbit torque(SOT)is necessary for developing a fast,long data retention,and high-density SOT magnetoresistive random access memory(MRAM).Here,we use both micromagnetic simulations and atomistic spin dynamics(ASD)simulations to demonstrate an approach to field-free SOT perpendicular magnetization switching without requiring any changes in the architecture of a standard SOT-MRAM cell.We show that this field-free switching is enabled by a synergistic effect of lateral geometrical confinement,interfacial Dyzaloshinskii–Moriya interaction(DMI),and current-induced SOT.Both micromagnetic and atomistic understanding of the nucleation and growth kinetics of the reversed domain are established.Notably,atomically resolved spin dynamics at the early stage of nucleation is revealed using ASD simulations.A machine learning model is trained based on~1000 groups of benchmarked micromagnetic simulation data.This machine learning model can be used to rapidly and accurately identify the nanomagnet size,interfacial DMI strength,and the magnitude of current density required for the field-free switching.

关 键 词：reversed MAGNETIZATION INTERFACIAL 

分 类 号：TB30[一般工业技术—材料科学与工程]