Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions  

作　　者：Chao Xie Peng You Zhike Liu Li Li Feng Yan 

机构地区：[1]Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong 999077,China [2]Institute of Textiles and Clothing,The Hong Kong Polytechnic University,Hong Kong 999077,China

出　　处：《Light(Science & Applications)》2017年第1期675-683,共9页光（科学与应用)（英文版）

基　　金：supported by the Research Grants Council(RGC)of Hong Kong,China(Project No.C4030-14G);the Hong Kong Polytechnic University(Project No.G-YBB7,1-BBA3,1-ZVK1 and 1-ZVGH).

摘　　要：Organolead halide perovskites have emerged as the most promising materials for various optoelectronic devices,especially solar cells,because of their excellent optoelectronic properties.Here,we present the first report of low-voltage high-gain phototransistors based on perovskite/organic-semiconductor vertical heterojunctions,which show ultrahigh responsivities of~10^(9)A W^(–1) and specific detectivities of~10^(14) Jones in a broadband region from the ultraviolet to the near infrared.The high sensitivity of the devices is attributed to a pronounced photogating effect that is mainly due to the long carrier lifetimes and strong light absorption in the perovskite material.In addition,flexible perovskite photodetectors have been successfully prepared via a solution process and show high sensitivity as well as excellent flexibility and bending durability.The high performance and facile solution-based fabrication of the perovskite/organic-semiconductor phototransistors indicate their promise for potential application for ultrasensitive broadband photodetection.

关 键 词：BROADBAND flexible organic semiconductor PEROVSKITE PHOTODETECTOR 

分 类 号：O61[理学—无机化学]