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作 者:Zhi-Bin Fan Hao-Yang Qiu Han-Le Zhang Xiao-Ning Pang Li-Dan Zhou Lin Liu Hui Ren Qiong-Hua Wang Jian-Wen Dong
机构地区:[1]State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yatsen University,Guangzhou 510275,China [2]School of Physics,Sun Yat-sen University,Guangzhou 510275,China [3]School of Instrumentation and Optoelectronic Engineering,Beihang University,Beijing 100191,China
出 处:《Light(Science & Applications)》2019年第1期586-595,共10页光(科学与应用)(英文版)
基 金:supported by National Natural Science Foundation of China(11761161002,61535007,61775243,61805288);Natural Science Foundation of Guangdong Province(Grant Nos.2018B030308005,2017A030310510);Science and Technology Program of Guangzhou(201804020029).
摘 要:Integral imaging is a promising three-dimensional(3D)imaging technique that captures and reconstructs light field information.Microlens arrays are usually used for the reconstruction process to display 3D scenes to the viewer.However,the inherent chromatic aberration of the microlens array reduces the viewing quality,and thus,broadband achromatic imaging remains a challenge for integral imaging.Here,we realize a silicon nitride metalens array in the visible region that can be used to reconstruct 3D optical scenes in the achromatic integral imaging for white light.The metalens array contains 60×60 polarization-insensitive metalenses with nearly diffraction-limited focusing.The nanoposts in each high-efficiency(measured as 47%on average)metalens are delicately designed with zero effective material dispersion and an effective achromatic refractive index distribution from 430 to 780 nm.In addition,such an achromatic metalens array is composed of only a single silicon nitride layer with an ultrathin thickness of 400 nm,making the array suitable for on-chip hybrid-CMOS integration and the parallel manipulation of optoelectronic information.We expect these findings to provide possibilities for full-color and aberration-free integral imaging,and we envision that the proposed approach may be potentially applicable in the fields of high-power microlithography,high-precision wavefront sensors,virtual/augmented reality and 3D imaging.
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