Resonant pitch and roll silicon gyroscopes with sub-micron-gap slanted electrodes:Breaking the barrier toward high-performance monolithic inertial measurement units  

作　　者：Haoran Wen Anosh Daruwalla Farrokh Ayazi 

机构地区：[1]School of Physics,Georgia Institute of Technology,837 State Street,Atlanta,GA 30332,USA [2]Department of Electrical and Computer Engineering,Georgia Institute of Technology,777 Atlantic Drive NW,Atlanta,GA 30332,USA

出　　处：《Microsystems & Nanoengineering》2017年第1期332-340,共9页微系统与纳米工程（英文）

基　　金：This work is supported by the DARPA MTO,Single-Chip Timing and Inertial Measurement Unit(TIMU)program under contract#N66001-11-C-4176.

摘　　要：This paper presents the design,fabrication,and characterization of a novel high quality factor(Q)resonant pitch/roll gyroscope implemented in a 40μm(100)silicon-on-insulator(SOI)substrate without using the deep reactive-ion etching(DRIE)process.The featured silicon gyroscope has a mode-matched operating frequency of 200 kHz and is the first out-of-plane pitch/roll gyroscope with electrostatic quadrature tuning capability to fully compensate for fabrication non-idealities and variation in SOI thickness.The quadrature tuning is enabled by slanted electrodes with sub-micron capacitive gaps along the(111)plane created by an anisotropic wet etching.The quadrature cancellation enables a 20-fold improvement in the scale factor for a typical fabricated device.Noise measurement of quadrature-cancelled mode-matched devices shows an angle random walk(ARW)of 0.63°√h^(−1) and a bias instability of 37.7°h^(−1),partially limited by the noise of the interface electronics.The elimination of silicon DRIE in the anisotropically wet-etched gyroscope improves the gyroscope robustness against the process variation and reduces the fabrication costs.The use of a slanted electrode for quadrature tuning demonstrates an effective path to reach high-performance in future pitch and roll gyroscope designs for the implementation of single-chip high-precision inertial measurement units(IMUs).

关 键 词：anisotropic wet etching MEMS resonant pitch/roll gyroscope quadrature cancellation slanted electrode 

分 类 号：TN3[电子电信—物理电子学]