功率芯片低热阻集成界面性能分析方法  

Performance Analysis Method of Low Thermal Resistance Integrated Interface for Power Chip

作　　者：张剑 卢茜[1] 叶惠婕 赵明 向伟玮[1] 曾策[1] ZHANG JIan;LU Qian;YE Huijie;ZHAO Ming;XIANG Weiwei;ZENG Ce(The 29th Research Institute of CETC,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第二十九研究所,四川成都610036

出　　处：《电子工艺技术》2021年第4期192-194,219,共4页Electronics Process Technology

摘　　要：使用瞬态测量界面热阻的方法,分别研究了金锡共晶、纳米银浆半烧结和纳米银浆烧结等集成工艺对功率芯片散热性能的影响,证实了纳米银浆烧结工艺具有更低的界面热阻(0.215 K/W),是最优的低热阻集成工艺。在此基础上,结合X-ray成像方法和扫描电子显微成像方法,解释了产生该现象的微观机理。研究表明,利用瞬态法分析功率芯片封装内热阻是一种可靠有效的方法。The infl uence of integrated processes such as gold-tin eutectic interconnect,nano-silver paste semi-sintering and nano-silver paste sintering on the heat dissipation performance of power chip is analyzed by the method of transient measurement of interface thermal resistance.It is confi rmed that the nano-silver paste sintering process has a lower interface thermal resistance(0.215 K/W),which is the optimal integration process with low thermal resistance.Then,X-ray imaging and scanning electron microscopy are used to explain the microcosmic mechanism of the phenomenon.The results show that the transient method is a reliable and effective method to analyze the internal thermal resistance to power chip package.

关 键 词：低热阻集成 瞬态热阻 纳米银浆 散热 

分 类 号：TN606[电子电信—电路与系统]