Identification of Defects in Undoped Semi-insulating InP by Positron Lifetime  

作　　者：MAO Wei-Dong WANG Shao-Jie WANG Zhu SUN Nie-Feng SUN Tong-Nian ZHAO You-Wen 毛卫东;王少阶;王柱;孙聂枫;孙同年;赵有文(Department of Physics,Wuhan University,Wuhan 430072;Hebei Semiconductor Research Institute,Shijiazhuang 050051)

机构地区：[1]Department of Physics,Wuhan University,Wuhan 430072 [2]Hebei Semiconductor Research Institute,Shijiazhuang 050051

出　　处：《Chinese Physics Letters》2001年第4期574-576,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No.69576020.

摘　　要：Positron lifetime measurements,carried out over the temperature range of 10-300 K,have been used to investigate defects in two undoped semi-insulating InP samples.The positron lifetime spectra were analysed by both PATFIT and MELT techniques.The results at room temperature reveal a positron lifetime around 273 ps,which is associated with indium vacancies VIn or VIn-hydrogen complexes.The positron average lifetime is temperature dependent and decreases with increasing temperature at the beginning(≤80 K and≤120 K),and then keeps unchanged,which is attributed to the influence of negative vacancies and detrapping of the positron from those negative ions of Mg,Zn,Ag,and Ca with ionization level(1-).

关 键 词：LIFETIME POSITRON unchanged 

分 类 号：TG1[金属学及工艺—金属学]