A Narrow Photoluminescence Linewidth of 19.2 meV at 1.35μm from In_(0.5)Ga_(0.5)As/GaAs Quantum Island Structure Grown by Molecular Beam Epitaxy  

作　　者：WANG Xiao-Dong NIU Zhi-Chuan FENG Song-Lin MIAO Zhen-Hua 王晓东;牛智川;封松林;苗振华(National Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)

机构地区：[1]National Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083

出　　处：《Chinese Physics Letters》2001年第4期608-610,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos.69876036 and 19823001;Hundred Talent Program of Chinese Academy of Sciences,and State Climbing Research Project.

摘　　要：Self-organized In_(0.5)Ga_(0.5) As/GaAs quantum island structure emitting at 1.35μm at room temperature has been successfully fabricated by molecular beam epitaxy via cycled(InAs)1/(GaAs)1 monolayer deposition method.Photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time,indicating effective suppression of inhomogeneous broadening of optical emission from the In_(0.5)Ga_(0.5) As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands.The mounds-like morphology of the islands elongated along the[1ī0]azimuth are observed by the atomic force microscopy measurement,which reveals the fact that strain in the islands is partially relaxed along the[1ī0]direction.Our results present important information for the fabrication of 1.3μm wavelength quantum dot devices.

关 键 词：QUANTUM PHOTOLUMINESCENCE island 

分 类 号：TN3[电子电信—物理电子学]