Growth and Photoluminescence of GaAs Quantum Dots on Si(100)  

作　　者：ZHANG Jian-Guo LI Guang-Hai ZHANG Yong JIN Yun-Xia ZHANG Li-De 张建国;李广海;张勇;晋云霞;张立德(Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031)

机构地区：[1]Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031

出　　处：《Chinese Physics Letters》2001年第7期989-990,共2页中国物理快报（英文版）

摘　　要：GaAs quantum dots(QDs)with high density and remarkable uniformity in dot size and distribution grown on Si(100)surface with artificial topography by radio-frequency sputtering have been demonstrated.The photoluminescence spectrum has been recorded.The growth of GaAs QDs is initiated with the preferential nucleation of small dots along ripples controlled by the Stranski-Krastanow growth mode.This method may be useful in combining high-speed and optoelectronic GaAs devices with Si integrated-circuit technology.

关 键 词：OPTOELECTRONIC Quantum TOPOGRAPHY 

分 类 号：TN3[电子电信—物理电子学]