硫硒化亚锗光电探测器的制备及光电性能  

Preparation and Photoelectric Properties of Germanium Sulphoselenide Photodetector

作　　者：梁雪静 赵付来 王宇 张义超 王亚玲 冯奕钰[1,2] 封伟 LIANG Xuejing;ZHAO Fulai;WANG Yu;ZHANG Yichao;WANG Yaling;FENG Yiyu;FENG Wei(School of Materials Science and Engineering,2.Key Laboratory of Advanced Ceramics and Machining Technology,Ministry of Education,Tianjin University,Tianjin 300072,China)

机构地区：[1]天津大学材料科学与工程学院,天津300072 [2]天津大学先进陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《高等学校化学学报》2021年第8期2661-2667,共7页Chemical Journal of Chinese Universities

基　　金：国家重点研发计划项目(批准号:2016YFA0202302);国家自然科学基金(批准号:51633007,51803149,51973155)资助~。

摘　　要：采用微机械剥离法得到横向尺寸约为12μm的硫硒化亚锗(GeS_(0.5)Se_(0.5))纳米片,以铬/金(Cr/Au)为接触电极,首次制备得到GeS_(0.5)Se_(0.5)光电探测器,并探究了其光电性能.结果表明,剥离所得的纳米片具有良好的结晶质量,硫和硒在纳米片中分布均匀,光学带隙为1.3 eV;该光电探测器在515 nm光激发下最大探测能力达到4.52×10^(13)Jones,最高响应度为1.15×10^(4)A/W,外部量子效率为2.79×10^(4)6%,展现出非常高效、快速和稳定的光响应能力.Germanium monochalcogenides are important members of groupⅣ—Ⅵsemiconductor materials,with abundant reserves,low cost and low toxicity.Due to suitable band gap,high carrier mobility and light absorption coefficient,they have become the ideal choices for sustainable optoelectronic devices.Alloy enginee-ring is an important method for band gap tunning,which can adjust the light absorption range and even suppress the recombination of carriers,thereby improving the performance of photodetectors.In this work,a ternary alloy of germanium sulphoselenide(GeS_(0.5)Se_(0.5))was synthesized by high-temperature solid-state reaction,and then the nanosheet with a lateral size of ca.12μm was prepared by micromechanical exfoliation.With the chromium(10 nm)/gold(120 nm)electrode as the contact electrode,a GeS0.5Se0.5 photodetector was prepared for the first time,and its photoelectric properties were explored.The results show that the nanosheet has good crystalline quality,sulfur and selenium atoms are uniformly distributed,and the optical band gap is 1.3 eV between GeSe(1.1—1.2 eV)and GeS(1.55—1.65 eV).Under 515 nm light excitation,the photodetector exhi-bits a very efficient,fast and stable optoelectronic properties,with a ultra-high specific detectivity(D*)of 4.52×10^(13) Jones,a high photoresponsivity(Rλ)of 1.15×10^(4) A/W,and an external quantum efficiency(EQE)of 2.79×10^(6)%.In short,this research has contributed a very promising new type of ternary semiconductor with a narrow band gap to the field of optoelectronic devices,and provided a certain reference and guidance for the research of high-performance optoelectronic devices.

关 键 词：硫硒化亚锗合金 半导体材料 微机械剥离 光电探测器 

分 类 号：O649[理学—物理化学]