GaInNAs/GaAs Multiple-Quantum Well Resonant-Cavity-Enhanced Photodetectors at 1.3μm  

作　　者：PAN Zhong LI Lian-He XU Ying-Qiang ZHANG Wei LIN Yao-Wang ZHANG Rui-Kang ZHONG Yuan REN Xiao-Min 潘钟;李联合;徐应强;张伟;林耀望;张瑞康;钟源;任晓敏(Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083;Beijing University of Post and Telecom,P.O.Box 66,Beijing 100876)

机构地区：[1]Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083 [2]Beijing University of Post and Telecom,P.O.Box 66,Beijing 100876

出　　处：《Chinese Physics Letters》2001年第9期1249-1251,共3页中国物理快报（英文版）

基　　金：Supported by the Major State Basic Research Program under Grant No.G2000036603;the National Natural Science Foundation of China under Grant Nos.69896260,69988005 and 69976007。

摘　　要：A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photodetector (RCE-PD) operated at a wavelength of 1.3μm with the full width at half maximum of 4nm has been demonstrated. The GaInNAs RCE-PD was grown by molecular beam epitaxy using a homemade ion-removed dc plasma cell as a nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature, which is very beneficial for applications in long-wavelength absorption devices. For a 100μm diameter RCE-PD, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3 dB bandwidth is 308 MHz, which is limited by the resistance of p-type distributed Bragg reflector mirror. The tunable wavelength in a range of 18nm with the angle of incident light was observed.

关 键 词：BREAKDOWN QUANTUM MIRROR 

分 类 号：TN2[电子电信—物理电子学]