掩模板法制备单根In_(2)O_(3)纳米带器件  

作　　者：艾鹏 蔡彦 杜国芳 马殿旭 李旋 李波 

机构地区：[1]昭通学院物理与信息工程学院,云南昭通657000

出　　处：《科学技术创新》2021年第23期189-190,共2页Scientific and Technological Innovation

摘　　要：一维纳米材料的智能化、小型化以及元件的高集成特性使得其在纳米光电子学、真空微电子传感器件和光集成电路等方面的应用发展迅速;其独特的物理、化学性质在发光二极管、压电转换器件和光催化纳米器件等领域的应用潜力也受到了广泛关注。本文首先通过碳热还原的方法制备一维的氧化铟纳米带,再通过掩模板构建基于单根纳米带的纳米器件,并测试了其欧姆特性。The application of one-dimensional nanomaterials in nano optoelectronics,vacuum microelectronic sensor parts and optical integrated circuits is developing rapidly due to their intelligence,miniaturization and high integration characteristics of components.Its unique physical and chemical properties have attracted extensive attention for their potential applications in the fields of light-emitting diodes,piezoelectric conversion devices and photocatalytic nanodevices.In this paper,one-dimensional indium oxide nanoribbon was firstly prepared by carbothermal reduction method,and then a single nanoribbon based nanodevice was constructed by masking,and its ohmic characteristics were tested.

关 键 词：掩模板法 In_(2)O_(3)纳米带 单根纳米带器件 

分 类 号：O48[理学—固体物理]