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作 者:LEI Hong-Wen ZHANG Hong WANG Xue-Min ZHAO Yan YAN Da-Wei JIANG Zhong-Qian YAO Gang ZENG Ti-Xian WU Wei-Dong 雷红文;张红;王学敏;赵妍;阎大伟;姜中钱;姚刚;曾体贤;吴卫东(Institution of Atomic and Molecular Physics,Sichuan University,Chengdu 610065;Joint Laboratory for Extreme Conditions Matter Properties,Southwest University of Science and Technology and Research Center of Laser Fusion,CAEP,Mianyang 621900;School of Physical Science and Technology,Sichuan University,Chengdu 610065;Science and Technology on Plasma Physics Laboratory,Research Center of Laser Fusion,CAEP,Mianyang 621900)
机构地区:[1]Institution of Atomic and Molecular Physics,Sichuan University,Chengdu 610065 [2]Joint Laboratory for Extreme Conditions Matter Properties,Southwest University of Science and Technology and Research Center of Laser Fusion,CAEP,Mianyang 621900 [3]School of Physical Science and Technology,Sichuan University,Chengdu 610065 [4]Science and Technology on Plasma Physics Laboratory,Research Center of Laser Fusion,CAEP,Mianyang 621900
出 处:《Chinese Physics Letters》2013年第11期192-194,共3页中国物理快报(英文版)
基 金:Supported by the Major Instrumentation Special of the Ministry of Science and Technology of China under Grant No 2011YQ130018;Open Foundation of Joint Laboratory for Extreme Conditions Matter Properties,Southwest University of Sci-ence and Technology and Research Center of Laser Fusion,CAEP(No 12zxjk06);the National High-Technology Research and Development Program of China.
摘 要:ZnO films are grown on c-sapphire substrates by laser molecular beam epitaxy.The band offsets of the ZnO/Al_(2)O_(3) heterojunction are studied by in situ x-ray photoelectron spectroscopy.The valence band of Al_(2)O_(3) is found to be 3.59±0.05 eV below that of ZnO.Together with the resulting conduction band offset of 2.04±0.05 eV,this indicates that a type-I staggered band line exists at the ZnO/Al_(2)O_(3) heterojunction.
关 键 词:SPECTROSCOPY TOGETHER
分 类 号:TB3[一般工业技术—材料科学与工程]
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