Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer  

作　　者：SU Shao-Jian HAN Gen-Quan ZHANG Dong-Liang ZHANG Guang-Ze XUE Chun-Lai WANG Qi-Ming CHENG Bu-Wen 苏少坚;韩根全;张东亮;张广泽;薛春来;王启明;成步文(College of Information Science and Engineering,Huaqiao University,Xiamen 361021;Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China,College of Optoelectronic Engineering,Chongqing University,Chongqing 400044;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083)

机构地区：[1]College of Information Science and Engineering,Huaqiao University,Xiamen 361021 [2]Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China,College of Optoelectronic Engineering,Chongqing University,Chongqing 400044 [3]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083

出　　处：《Chinese Physics Letters》2013年第11期195-198,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2013CB632103 and 2011CBA00608;the National Natural Science Foundation of China under Grant Nos 61036003,61177038 and 61176013;the Science Research Foundation of Huaqiao University under Grant 12BS221.

摘　　要：Germanium-tin(Ge_(1-x)Sn_(x))p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)were fabricated using a strained Ge_(0.985)Sn_(0.015) thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer.The Ge buffer was deposited using a two-step chemical vapor deposition growth technique.The high quality Ge_(0.985)Sn_(0.015) layer was grown by solid source molecular beam epitaxy.Ge_(0.985)Sn_(0.015) pMOSFETs with Si surface passivation,TaN/HfO_(2) gate stack,and nickel stanogermanide[Ni(Ge_(1-x)Sn_(x))]source/drain were fabricated on the grown substrate.The device achieves an effective hole mobility of 182 cm^(2)/V·s at an inversion carrier density of 1×10^(13) cm^(-2).

关 键 词：technique DRAIN relaxed 

分 类 号：TN3[电子电信—物理电子学]