Annealing Effect of Pulsed Laser Deposited Transparent Conductive Ta-Doped Titanium Oxide Films  

作　　者：WU Bin-Bin PAN Feng-Ming YANG Yu-E 吴彬彬;潘风明;杨玉娥(Department of Applied Physics,College of Science,Nanjing University of Aeronautics and Astronautics,Nanjing 211100)

机构地区：[1]Department of Applied Physics,College of Science,Nanjing University of Aeronautics and Astronautics,Nanjing 211100

出　　处：《Chinese Physics Letters》2011年第11期239-242,共4页中国物理快报（英文版）

基　　金：by the Creation Foundation for Young Researchers at Nanjing University of Aeronautics and Astronautics(NUAA);the National Natural Science Foundation of China under Grant No 51032002;the National High Technology Research and Development Program of China(No 2011AA050526).

摘　　要：Tantalum-doped TiO_(2) films were deposited on glass at 300℃ by pulsed laser deposition(PLD).After postannealing in vacuum(∼10^(−4) Pa)at temperatures ranging from 450℃ to 650℃,these films were crystallized into an anatase TiO_(2) structure and presented good conductive features.With increasing annealing temperature up to 550℃,the resistivity of the films was measured to be around 8.7×10^(−4)Ω・cm.Such films exhibit high transparency of over 80%in the visible light region.These results indicate that tantalum-doped anatase TiO_(2) films have a great potential as transparent conducting oxides.

关 键 词：ANNEALING TITANIUM TRANSPARENCY 

分 类 号：TG1[金属学及工艺—金属学]