High Performance Polymer Field-Effect Transistors Based on Thermally Crosslinked Poly(3-hexylthiophene)  

作　　者：JIANG Chun-Xia YANG Xiao-Yan ZHAO Kai WU Xiao-Ming YANG Li-Ying CHENG Xiao-Man WEI Jun YIN Shou-Gen 姜春霞;杨小艳;赵恺;吴晓明;杨利营;程晓曼;魏军;印寿根(Key Laboratory of Display Materials and Photoelectric Devices(Ministry of Education),Tianjin University of Technology,Tianjin 300384;Institute of Material Physics,and Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology,Tianjin 300384;Singapore Institute of Manufacturing Technology,71 Nanyang Drive,Singapore)

机构地区：[1]Key Laboratory of Display Materials and Photoelectric Devices(Ministry of Education),Tianjin University of Technology,Tianjin 300384 [2]Institute of Material Physics,and Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology,Tianjin 300384 [3]Singapore Institute of Manufacturing Technology,71 Nanyang Drive,Singapore

出　　处：《Chinese Physics Letters》2011年第11期264-267,共4页中国物理快报（英文版）

基　　金：by the National Natural Science Foundation of China under Grant Nos 60676051,60876046,60976048 and 61076065,Tianjin Natural Science Foundation(06TXTJJC14603,07JCYBJC12700);Key Project of the Ministry of Education of China(209007);Tianjin Natural Science Council(10ZCKFGX01900);Scientific Developing Foundation of Tianjin Education Commission(20100723);the Tianjin Key Discipline of Material Physics and Chemistry.

摘　　要：The performance of polymer field-effect transistors is improved by thermal crosslinking of poly(3-hexylthiophene),using ditert butyl peroxide as the crosslinker.The device performance depends on the crosslinker concentration significantly.We obtain an optimal on/off ratio of 105 and the saturate field-effect mobility of 0.34 cm2V−1s−1,by using a suitable ratios of ditert butyl peroxide,0.5 wt%of poly(3-hexylthiophene).The microstructure images show that the crosslinked poly(3-hexylthiophene)active layers simultaneously possess appropriate crystallinity and smooth morphology.Moreover,crosslinking of poly(3-hexylthiophene)prevents the transistors from large threshold voltage shifts under ambient bias-stressing,showing an advantage in encouraging device environmental and operating stability.

关 键 词：stability MORPHOLOGY THIOPHENE 

分 类 号：O63[理学—高分子化学]