Impact of Au Nanocrystal Size and Inter-Nanocrystal Distance on the Storage Characteristics of Memory Devices  

作　　者：LAN Xue-Xin OU Xin XU Bo GONG Chang-Jie LI Run YIN Qiao-Nan XIA Yi-Dong YIN Jiang LIU Zhi-Guo LI Ai-Dong YAN Feng 蓝学新;欧欣;徐波;龚昌杰;李润;殷乔楠;夏奕东;殷江;刘治国;李爱东;闫锋(National Laboratory of Solid State Microstructures,and Department of Physics,Nanjing University,Nanjing 210093;National Laboratory of Solid State Microstructures,and Department of Materials Science and Engineering,Nanjing University,Nanjing 210093;School of Electronics Science and Engineering,Nanjing University,Nanjing 210093)

机构地区：[1]National Laboratory of Solid State Microstructures,and Department of Physics,Nanjing University,Nanjing 210093 [2]National Laboratory of Solid State Microstructures,and Department of Materials Science and Engineering,Nanjing University,Nanjing 210093 [3]School of Electronics Science and Engineering,Nanjing University,Nanjing 210093

出　　处：《Chinese Physics Letters》2013年第12期161-164,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 61176124;the National Basic Research Program of China under Grant No 2010CB934201;the Priority Academic Program Development of Jiangsu Higher Education Institutions.

摘　　要：The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size and inter-NC distance on the charge trapping capability of the devices is observed.The total surface area of Au NCs associated with Au NC size is supposed to be a key factor in the charge-storage capability,and the device with larger size of Au NCs and a suitable inter-NC distance will possess better charge trapping capability.Variable range hopping as the lateral charge loss mechanism is considered as the main reason for the decrease of the charge trapping capability when Au NCs grow and overlap neighbors.

关 键 词：TRAPPING size CHARGE 

分 类 号：TB3[一般工业技术—材料科学与工程]