Non-UV Photoelectric Properties of the Ni/n-Si/N+-SiC Isotype Heterostructure Schottky Barrier Photodiode  

作　　者：LI Lian-Bi CHEN Zhi-Ming REN Zhan-Qiang GAO Zhan-Jun 李连碧;陈治明;任占强;高战军(Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048;School of Science,Xi’an Polytechnic University,Xi’an 710048)

机构地区：[1]Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048 [2]School of Science,Xi’an Polytechnic University,Xi’an 710048

出　　处：《Chinese Physics Letters》2013年第9期149-152,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 51177134;the Natural Science Basic Research Plan in Shaanxi Province under Grant No 2012JQ8009;Scientific Research Program Funded by Shaanxi Provincial Education Department under Grant Nos 12JK0546 and 12JK0975;China Postdoctoral Science Foundation under Grant No 2013M532072;Doctoral Scientific Research Foundation of Xi’an Polytechnic University under Grant No BS1129.

摘　　要：The energy-band structure and non-ultraviolet photoelectric properties of a Ni/n-Si/N^(+)-SiC isotype heterostruc-ture Schottky photodiode are simulated by using Silvaco-Atlas.There are energy offsets in the conduction and valance band of the heterojunction,which are about 0.09eV and 1.79eV,respectively.The non-UV photodiode with this structure is fabricated on a 6H-SiC(0001)substrate.𝐾J–V𝑊measurements indicate that the device has good rectifying behavior with a rectification ratio up to 200 at 5V,and the turn-on voltage is about 0.7V.Under non-ultraviolet illumination of 0.6W/cm^(2),the device demonstrates a significant photoelectric response with a photocurrent density of 2.9mA/cm^(2)and an open-circuit voltage of 63.0mV.Non-ultraviolet operation of the SiC-based photoelectric device is initially realized.

关 键 词：Schottky heterojunction Si/N 

分 类 号：TN3[电子电信—物理电子学]