Strain Distributions in Non-Polar a-Plane In_(x)Ga_(1−x)N Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction  

作　　者：ZHAO Gui-Juan YANG Shao-Yan LIU Gui-Peng LIU Chang-Bo SANG Ling GU Cheng-Yan LIU Xiang-Lin WEI Hong-Yuan ZHU Qin-Sheng WANG Zhan-Guo 赵桂娟;杨少延;刘贵鹏;刘长波;桑玲;谷承艳;刘祥林;魏鸿源;朱勤生;王占国(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083)

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083 [2]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083

出　　处：《Chinese Physics Letters》2013年第9期169-172,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 91233111,61274041,11275228,61006004 and 61076001;the National Basic Research Program of China(No 2012CB619305);the National High-Technology R&D Program of China(No 2011AA03A101).

摘　　要：By using x-ray diffraction analysis,we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In_(x)𝑦Ga_(1−x)𝑦N thin films grown on r-sapphire substrates by metalorganic chemical vapour deposition.The results of the inplane grazing incidence diffraction technique are analyzed and compared with a complementary out-of-plane high resolution x-ray diffraction technique.When the indium composition is low,the a-plane In_(x)𝑦Ga_(1−x)𝑦N layer is tensile strain in the growth direction(𝑏a-axis)and compressive strain in the two in-plane directions(𝑛a-axis and𝑑a-axis).The strain status becomes contrary when the indium composition is high.The stress in the𝑛a-axis direction𝜏σyy is larger than that in the a-axis directionσzz.Furthermore,strain in the two in-plane directions decrease and the crystal quality becomes better with the growing of the In_(x)Ga_(1−z)N film.

关 键 词：technique deposition. PLANE 

分 类 号：TG1[金属学及工艺—金属学]