Effect of Cations on the Chemical Mechanical Polishing of SiO_(2) Film  

作　　者：SONG Han WANG Liang-Yong LIU Wei-Li SONG Zhi-Tang 宋晗;王良咏;刘卫丽;宋志棠(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050)

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050

出　　处：《Chinese Physics Letters》2013年第9期173-176,共4页中国物理快报（英文版）

基　　金：Supported by the National Integrate Circuit Research Program of China(2011ZX02704-002,2009ZX02030-001);the National Natural Science Foundation of China(51205387);Science and Technology Council of Shanghai(11nm0500300,10QB1403600).

摘　　要：We investigate the effect of cations with different valences on the chemical mechanical polishing(CMP)of silicon dioxide films.The removal rate and surface roughness of the silicon-dioxide-film post-CMP are checked for the silica-based slurry with different cation salts(NaCl,CaCl_(2),AlCl_(3)).Meanwhile,the particle size and size distribution of the slurries are characterized to test their lifetimes.The result shows that the three kinds of salts can improve the polishing removal rate from around 20nm/min to 120nm/min without affecting the surface roughness when the polishing slurry is stable.With increasing valence of cations,the polishing slurry requires less cation concentration to be added to improve the removal rate,while keeping a superior surface topography and maintaining a longer lifetime as well.

关 键 词：POLISHING ROUGHNESS dioxide 

分 类 号：TG1[金属学及工艺—金属学]