Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors  

作　　者：PENG Chao ZHANG Zheng-Xuan HU Zhi-Yuan HUANG Hui-Xiang NING Bing-Xu BI Da-Wei 彭超;张正选;胡志远;黄辉祥;宁冰旭;毕大炜(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050;Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,Guangzhou 510610)

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050 [2]Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,Guangzhou 510610

出　　处：《Chinese Physics Letters》2013年第9期185-189,共5页中国物理快报（英文版）

基　　金：Supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(ZHD201205);the National Natural Science Foundation of China(61106103 and 61107031).

摘　　要：The total ionizing dose effects of partially depleted silicon-on-insulator(SOI)transistors in a 0.13𝜈m technology are studied by^(60)Co𝛿-ray irradiation.Radiation enhanced drain-induced barrier lowering(DIBL)under different bias conditions is related to the parasitic bipolar in the SOI transistor and oxide trapped charge in the buried oxide,and it is experimentally observed for short channel transistors.The enhanced DIBL effect manifests as the DIBL parameter increases with total dose.Body doping concentration is a key factor affecting the total ionizing dose effect of the transistor.The low body doping transistor exhibits not only significant front gate threshold voltage shift as a result of the coupling effect,but also great off-state leakage at high drain voltage due to the enhanced DIBL effect.

关 键 词：DRAIN transistor BIPOLAR 

分 类 号：TN3[电子电信—物理电子学]