The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of Narrow Width Devices in 0.2 µm Partially-Depleted Silicon-on-Insulator Technology  

作　　者：HUANG Hui-Xiang BI Da-Wei PENG Chao ZHANG Yan-Wei ZHANG Zheng-Xuan 黄辉祥;毕大炜;彭超;张彦伟;张正选(The State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050;Graduate University of the Chinese Academic of Sciences,Beijing 100049)

机构地区：[1]The State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050 [2]Graduate University of the Chinese Academic of Sciences,Beijing 100049

出　　处：《Chinese Physics Letters》2013年第8期30-33,共4页中国物理快报（英文版）

摘　　要：An anomalous total dose effect is observed in narrow-width devices fabricated in a 0.2μm partially-depleted silicon-on-insulator(SOI)technology.The previous radiation-induced narrow channel effect manifests itself with obvious threshold voltage shift after the transistors are subjected to total dose radiation in bulk technology.Nevertheless,a sharply increasing off-state leakage current dominates the total dose effects in narrow devices of this partially-depleted SOI technology instead of threshold voltage shifts.A radiation-induced positive charge trapping model is introduced to understand this phenomenon.The enhanced role of shallow-trench oxide induced by compressive mechanical stress in narrow devices is discussed in detail in terms of modification of the edge impurity density and charge trapping characteristics,which affect the total dose sensitivity.

关 键 词：TRENCH NARROW TRAPPING 

分 类 号：TN3[电子电信—物理电子学]